6H-SiC肖特基源漏MOSFET的模拟仿真研究  

A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

作　　者：王源[1] 张义门[1] 张玉明[1] 汤晓燕[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2003年第10期2553-2557,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6 0 2 76 0 4 7);重点实验室基金 (批准号 :514 32 0 50 10 1DZ0 1)资助的课题~~

摘　　要：给出了一种新型SiCMOSFET——— 6H SiC肖特基源漏MOSFET .这种器件结构制备工艺简单 ,避免了长期困扰常规SiCMOSFET的离子注入工艺难度大、退火温度高、晶格损伤大 ,注入激活率低等问题 .分析了该器件的电流输运机理 ,并通过MEDICI模拟 ,给出了SiC肖特基源漏MOSFET伏安特性以及其和金属功函数、栅氧化层厚度和栅长关系 .A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind the device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also It has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed.

关 键 词：碳化硅 MOSFET 肖特基源漏 模拟 仿真 势垒高度 伏安特性 6H-SIC 肖特基接触 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术]