晶体硅中的铁沉淀规律  

Iron Precipitation in Crystalline Silicon

作　　者：席珍强[1] 杨德仁[1] 陈君[1] 王晓泉[1] 汪雷[1] 阙端麟[1] H.J.Moeller 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]Institute for Experimental Physics

出　　处：《Journal of Semiconductors》2003年第11期1166-1170,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号 :5 0 0 3 2 0 10;5 99760 2 5 )~~

摘　　要：研究了在直拉单晶硅和铸造多晶硅中经 110 0℃热处理快冷或慢冷条件下所形成的铁沉淀规律及其对少数载流子扩散长度的影响 .红外扫描仪照片显示在直拉单晶硅中慢冷却形成的铁沉淀密度较低 ,而且其尺寸较大 ;在铸造多晶硅中 ,铁易在晶界上沉淀 ,沉淀规律也依赖于冷却速度 .表面光电压仪测试结果表明 :无论在直拉单晶硅材料中还是在铸造多晶硅材料中 ,快冷形成的铁沉淀对少数载流子扩散长度影响更大 .The behavior of iron precipitation in Czochralski silicon (Cz Si) and cast multicrystalline silicon (mc Si) annealed at 1100℃ followed by air cooling or slow cooling is studied by the means of scanning infrared microscope (SIRM) and surface photovoltage (SPV).The SIRM images show that the iron precipitation with large size and low density is formed in Cz Si sample under slow cooling.In mc Si,iron preferably precipitates in grain boundaries,and the behavior of precipitation also depends on cooling rate.The SPV results reveal that the minority carrier diffusion length for the samples under air cooling is much shorter than that for the samples under slow cooling no matter what kind of silicon material.The experiment results prove the thermodynamics and kinetics of iron precipitation in silicon.

关 键 词：硅 铁 沉淀 少数载流子 

分 类 号：TN304.1[电子电信—物理电子学]