管式电炉合成氮化镓晶粒的研究  

Study of GaN crystalline fabricated in the electronic tube furnace

作　　者：黄萍[1] 薛成山[1] 李秀琴[1] 魏琴琴[1] 

机构地区：[1]山东师范大学物理系半导体所,山东济南250014

出　　处：《微纳电子技术》2003年第11期27-29,共3页Micronanoelectronic Technology

摘　　要：以Ga2O3为Ga源,氨气(NH3)为N源,通过氮化反应合成了高质量的GaN晶粒。用XRD,FTIR和TEM对生成产物的组分、结构进行了研究。结果表明,用管式电炉合成的GaN为多晶体,属六方晶系。GaN crystal particles have been fabricated by nitriding Ga 2 O 3 in the tube furnace.The samples were characterized by XRD,FTIR and TEM.The results reveal that the formed GaN crystals are polycrystalline GaN with hexagonal phase.

关 键 词：管式电炉 氮化镓晶粒 合成工艺 GAN 半导体 

分 类 号：TN304.23[电子电信—物理电子学]