非共振激发条件下微腔中激子自发辐射的时间分辨光谱  

Time Resolved Spontaneous Emission of Excitons in a Microcavity under Nonresonant Excitation

作　　者：刘宝利[1] 徐仲英[1] 王炳新[1] 邓元明[1] 杨富华[1] 

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《发光学报》2000年第4期299-304,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目!(197740 45 )

摘　　要：低温下 ,测量了InGaAs量子阱平面微腔的时间分辨光谱。在非共振激发条件下 ,观察到上下两支腔极化激元光荧光的衰退时间与失谐无关 ;下支腔极化激元光荧光的上升时间也与失谐无关 ;而上支腔极化激元光荧光的上升时间却与失谐有强烈的依赖关系 ,随着从负失谐到正失谐的增加 ,上升时间逐渐减小。Low temperature time resolved luminescence experiments have been performed on a semiconductor planar microcavity which contains two In 0 13 Ga 0 87 As/GaAs quantum wells(QWs)embedded in a two third wave cavity.The excition photon mixing was observed in the structure.The spontaneous emission dynamics of the each of the two components were studied as a function of the excition cavity detuning under nonresonant optical excitation.In the strong coupling regime,the decay times of the low and the upper branch cavity polaritons are almost independent of the cavity detuning.Considering the special structure of a planar microcavity,the polariton states with k ∥ in the strong coupling region hold only a small fraction of the radiative states(roughly 10%).Most of the rediative states are within the leaky modes of the distributed Bragg reflectors.The photoluminescence decay times of the upper and low branch polaritons are uniquely determined by the radiative states within the leaky modes.Therefore,the decay time is independent of detuning.However,we observed that the rise times of the low and the upper polaritons are obviously different.The rise time of the low branch is independent of the detuning and that of the upper branch is a marked dependence on the detuning.Due to the bottleneck effect and the faster radiative rate of the low branch at k ∥=0,the rise time of the PL of the low branch at k ∥=0 is only determined by the population buildup time at the bottom of the excitonlike branch.Hence it is detuning independent.With respect to the rise time of the upper branch,the population of the upper branch mainly comes from the excitons of the low branch with the same energy.In particular,the energy of the upper branch polaritons with k ∥=0 for larger positive detunings is much higher than that of the bottleneck region and cooling excitions can easily reach these states well before reaching the bottom of the excitonlike branch.Consequently,the PL rise time of the upper branch becomes faster.On the

关 键 词：半导体平面微腔 InGaAs量子阱 时间分辨光谱 

分 类 号：O472.3[理学—半导体物理]