单晶硅镜面超光滑表面工艺技术研究  

Study on Technologies and Techniques for Processing Super-Smooth Surface of Single-Crystal Silicon

作　　者：徐清兰[1] 伍凡[1] 吴时彬[1] 王家金[1] 雷柏平[1] 兰秀清[1] 张晶[1] 

机构地区：[1]中国科学院光电技术研究所,四川成都610209

出　　处：《光电工程》2003年第5期69-72,共4页Opto-Electronic Engineering

摘　　要：用古典的沥青盘抛光技术,通过对超光滑抛光时所使用磨料的选取、沥青抛光盘的软硬和 厚度的合理应用、抛光温度的控制等工艺参数的优化,以f220mm内的单晶硅进行了超光滑表面抛光工艺试验。试验结果,单晶硅表面粗糙度RMS值达0.37nm,平面面形误差PV小于l/15,且加工工艺技术稳定可靠。With traditional pitch lap technique, through selection of the polishing powder, reasonably application of hardness and thickness of pitch lap as well as optimizing polishing temperature, polishing technological tests for super-smooth surface of single-crystal silicon within a range of f220mm are carried out. The obtained testing results are surface roughness RMS value of single-crystal silicon 0.37nm and plane surface shape error PV less than l/15. The processing technologies and techniques are stable and reliable.

关 键 词：抛光 磨料 单晶硅 沥青盘 

分 类 号：TQ171.684[化学工程—玻璃工业]