拉曼光谱方法研究SiC晶体的晶型  

Raman Study of SiC Polytype Structure

作　　者：冯敏[1] 王玉芳[1] 郝建民[2] 蓝国祥[1] 

机构地区：[1]南开大学物理科学学院,天津300071 [2]信息产业部四十六研究所,天津300192

出　　处：《光散射学报》2003年第3期158-161,共4页The Journal of Light Scattering

摘　　要：本文采用拉曼光谱方法对改进Lely生长法制备的SiC单晶的结构进行了分析,结果表明:晶体的结构为6H,样品的内部缺陷较多,其中存在4H-SiC。另外我们还测量了SiC晶体的高阶拉曼谱,并对其进行了分析归属。从分析结果来看拉曼光谱是研究SiC的晶体结构和生长质量有效快捷的方法。Structure of SiC crystal prepared by modified Lely method has been characterized with Raman scattering spectrum, and we found the structure of crystal is 6HSiC. There are a lot of defects in crystal, including 4H defects. Also, the high frequency Raman spectrum of the sample has been observed and the result has been analysis and classified. Our study validate the conclusion that Raman scattering is a powerful tool to characterize SiC crystals.

关 键 词：拉曼光谱 SIC晶体 晶型 改进Lely生长法 晶体结构 高阶拉曼谱 生长质量 碳化硅 半导体材料 

分 类 号：TN304.24[电子电信—物理电子学] O766[理学—晶体学]