等离子平板显示选址芯片设计  

The Design for Plasma Display Panel Data IC

作　　者：吴建辉[1] 孙伟锋[1] 李红[1] 陆生礼[1] 

机构地区：[1]东南大学国家ASIC系统工程中心,江苏南京210096

出　　处：《电路与系统学报》2003年第5期123-126,共4页Journal of Circuits and Systems

摘　　要：采用标准CMOS工艺设计出PDP(Plasma Display Panel)选址芯片,重点设计出一种高压结构—HV-CMOS(High Voltage CMOS)结构,采用单阱非外延工艺以降低生产难度和成本,实现了高低压之间的兼容。同时采用TSUPREM-4对该结构进行工艺模拟、并用MEDICI分析其电流—电压和击穿等特性,说明该结构可以满足设计要求。Based on standard CMOS process, the PDP data driver IC with high voltage CMOS (HV-CMOS) structure has been designed. In order to decrease the process complexity as to reduce production cost, idiographic processsingle well without extension is adopted to realize the HV-CMOS such that the high voltage can be compatible with low voltage. The process and characteristic of the HV-CMOS are simulated with TSUPREM-4 and MEDICI respectively.

关 键 词：等离子平板显示 高压CMOS 高/低压兼容 CMOS工艺 

分 类 号：TN710[电子电信—电路与系统] TN432