晶体管发射区归一化面积的温度谱  

Temperature spectrum on normalized areaof emission region area for transistors

作　　者：苗庆海[1] 杜文华[1] 张兴华[1] 吴洪江[2] 张德骏[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《半导体技术》2003年第12期53-56,共4页Semiconductor Technology

基　　金：国家自然科学基金项目(69946001)

摘　　要：从芯片表面的红外热像图中提取出了发射区热像图,提出了一种定量描述晶体管结温不均匀性的新方法,即发射区热谱分析方法。发射区热谱是发射区归一化面积的温度谱,也就是发射区温度所占有的发射区归一化面积对温度的直方图。本文提供了由红外热像图导出发射区热谱的过程及结果。The infrared image of the emission region from the entire infrared image of a chipsurface is abstracted. Based on it, a new method,emission region thermal spectrum analysismethod,which is able to quantitatively describe the uniformity of the junction temperature isproposed. The spectrum is the bar chart of the emission region temperature vs. the normalizationarea of the emission region occupied by the temperature. The bar chart is the temperature spectrumof normalization area of the emission region, or for short, emission region thermal spectrum. As well,the procedure and results of deriving the emission region thermal spectrum from infrared images areprovided.

关 键 词：芯片表面 红外热像图 发射区热像图 晶体管结温不均匀性 发射区热谱 红外热像 峰值结温 

分 类 号：TN32[电子电信—物理电子学]