双异质外延SOI材料Si/γ-Al_2O_3/Si的外延生长  

Growth of Double Heteroepitaxial SOI Materials of Si/γ-Al_2O_3/Si

作　　者：谭利文[1] 王俊[1] 王启元[1] 郁元桓[1] 邓惠芳[1] 王建华[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《Journal of Semiconductors》2003年第12期1289-1292,共4页半导体学报（英文版）

基　　金：国家重点基础研究专项经费资助项目 (No.G2 0 0 0 0 3 65 )~~

摘　　要：利用 MOCVD(metalorganic chemical vapor deposition)和 APCVD(atmosphere chemical vapor deposition)硅外延技术在 Si(10 0 )衬底上成功地制备了双异质 Si/γ- Al2 O3/Si SOI材料 .利用反射式高能电子衍射 (RHEED)、X射线衍射 (XRD)及俄歇能谱 (AES)对材料进行了表征 .测试结果表明 ,外延生长的 γ- Al2 O3和 Si薄膜都是单晶薄膜 ,其结晶取向为 (10 0 )方向 ,外延层中 Al与 O化学配比为 2∶ 3.同时 ,γ- Al2 O3外延层具有良好的绝缘性能 ,其介电常数为 8.3,击穿场强为 2 .5 MV/cm.AES的结果表明 ,Si/γ- Al2 O3/Si双异质外延 SOI材料两个异质界面陡峭清晰 .Double heteroepitaxial SOI material of Si/γ-Al_2O_3/Si is successfully grown on Si(100) substrate.First,single crystalline γ-Al_2O_3(100) insulator films are grown epitaxially on Si(100) using the sources of TMA (Al(CH_3)_3) and O_2 by very low-pressure chemical vapor deposition (VLP-CVD).Afterwards,Si(100) epitaxial films are grown on γ-Al_2O_3(100)/Si(100) epi-substrates using an APCVD method.The Si/γ-Al_2O_3/Si SOI materials are characterized in detail by RHEED,XRD and AES techniques.The XRD and RHEED results indicate that both γ-Al_2O_3 and Si epi-layers are single crystal films,and their crystal orientation is Si(100)/γ-Al_2O_3(100)/Si(100).The AES shows that the ratio of oxygen atoms to aluminum atoms is 3∶2. Meanwhile,the insulator layer of γ-Al_2O_3 has an excellent dielectric property.The dielectric constant of γ-Al_2O_3 films is 8.3 and the breakdown electric field is 2.5MV/cm for the 70nm γ-Al_2O_3 epi-layer.

关 键 词：SOI MOCVD 双异质外延 Si/γ-Al2O3/Si 外延技术 

分 类 号：TN304.055[电子电信—物理电子学]