自旋极化电子从铁磁金属注入半导体时自旋极化的计算  

Calculations of the spin-polarization of the electronic current injected from a ferromagnetic metal into a semiconductor

作　　者：李统藏[1] 刘之景[1] 王克逸[2] 

机构地区：[1]中国科学技术大学近代物理系 [2]中国科学技术大学精密机械与精密仪器系,合肥230027

出　　处：《物理学报》2003年第11期2912-2917,共6页Acta Physica Sinica

摘　　要：对自旋极化电子从铁磁金属通过绝缘层薄膜注入半导体时的自旋极化率与绝缘层厚度以及所加偏压的关系等作了计算 .所得结果与最新实验结果相符 ,并发现偏压适中、绝缘层较厚时有较大的电流自旋极化率 ,偏压很小时电流自旋极化率几乎为零 .In this paper, we calculate the relationships both between the width of the tunnel barrier and the spin-polarization (SP) of the electronic current when it is injected from a ferromagnetic metal into a semiconductor through a tunnel barrier and between the bias and SP. The results agree with the latest experimental results. We found that a moderate bias and tunnel barrier width allow a giant SP and there is little spin injection at very low bias.

关 键 词：铁磁金属 自旋极化电子注人 自旋极化率 绝缘层厚度 隧道磁电阻 非零偏压 半导体极化理论 

分 类 号：O471[理学—半导体物理]