STO/YBCO薄膜的制备及介电性能研究  

Preparation and dielectric properties of STO/YBCO thin films

作　　者：李德红[1] 刘兴钊[1] 何世明[1] 陆清芳[1] 李言荣[1] 张鹰[1] 申妍华[1] 陈家俊[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《功能材料》2003年第6期660-661,664,共3页Journal of Functional Materials

摘　　要：　采用脉冲激光沉积技术,在(100)LaAlO3单晶基片上生长SrTiO3/Y1Ba2Cu3O7-x(STO/YBCO)多层薄膜。XRD分析表明:YBCO薄膜和STO薄膜均为C轴取向,STO(002)/YBCO(006)衍射峰摇摆曲线半高宽为0.73°。AFM分析表明,STO/YBCO多层薄膜表面平整、均匀,在77K,100kHz的测试条件下,STO薄膜介电损耗tgδ<10-2,在53.6kV/cm电场作用下,介电常数的相对变化为38%。In this study, SrTiO_3/Y_1Ba_2Cu_3O_(7-_x_)(STO/YBCO) multiplayer thin films were deposited on (100)LaAlO_3 single-crystal substrate by PLD method. X-ray diffraction result showed that SrTiO_3/Y_1Ba_2Cu_3O_(7-_x_)(STO/YBCO) were well-crystallized and highly c-axis oriented. AFM images indicated that surfaces of SrTiO_3/Y_1Ba_2Cu_3O_(7-_x_)(STO/YBCO) were smooth and homogeneous. Tunability greater than 38% was achievable with the bias field of 53.6kV/cm. The dielectric dissipation of STO films lower than 10^(-2) was achieved at 100kHz around 77K.

关 键 词：STO/YBCO薄膜 制备 介电性能 铁电薄膜 脉冲激光沉积 界面势垒 

分 类 号：O484[理学—固体物理]