共振隧穿二极管(RTD)I-V特性的几个问题  

Some Problems on I-V Characteristics of Resonant Tunneling Diodes (TRD)

作　　者：张世林[1] 郭维廉[1] 梁惠来[1] 侯志娟[1] 牛萍娟[1] 赵振波[1] 郭辉[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《固体电子学研究与进展》2003年第3期329-333,共5页Research & Progress of SSE

基　　金：国防科技重点实验室基金资助项目 (NO.99JSO2 .4.2 JW14 0 3 )

摘　　要：对作者研制的 RTD进行了 I-V特性测量 ,并重点分析了 :(1 ) I-V特性的湿度效应 ;(2 )负阻区“表观正阻”现象 ;(3 )用负阻值估算开关时间。以上问题的分析对We have measure d the I V characteristics of the RTD own fabricated. Based on the measured results, some problems have been analysed and discussed:(1) Temperature effects on I V characteristics; (2)Apparent positive resistance phenomena in neg ative resistance region; (3)Estimation of RTD switching time by negative resista nce value. The analysis and discussion on above problems are very useful and hel pful for design and fabrication of RTD.

关 键 词：共振隧穿二极管 RTD I-V特性 负阻伏安特性 开关时间 

分 类 号：TN313.2[电子电信—物理电子学]