一种多模式SRAM单粒子试验系统的设计与实现  

The Design and Realization of a Multi-Mode SRAM SEU TEST System

作　　者：郑宏超[1] 岳素格[1] 董攀[1] 陈莉明[1] 陈茂鑫[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《微电子学与计算机》2014年第9期92-95,共4页Microelectronics & Computer

摘　　要：提出了一种基于NIOS II的异步SRAM单粒子效应检测系统,用于评估抗辐射加固SRAM电路的抗单粒子效应能力.该检测系统可以对异步SRAM进行四种工作模式下的动态和静态检测,利用该检测系统在重离子加速器上对一款异步SRAM进行了单粒子效应试验,获得了5种离子的试验数据,统计分析后得到了器件的单粒子翻转阈值、单粒子翻转饱和截面和单粒子翻转在轨错误率,并与国外同款电路进行了对比,最后依据试验结果给出了评估结论.This paper presents a NIOS II-based Single Event Effects detection system of asynchronous SRAM,which is used to evaluate the single-event-effect capabilities of anti-radiation hardened SRAM circuit.The detection system can be used for dynamic and static testing of asynchronous SRAM in four operating mode.The experimental data of five kinds' icons are obtained under the heavy ion accelerator by using the detection system with one kind asynchronous SRAM.Single-event-upset threshold、saturated-cross-section and in-orbit-error-rate are taken by statistical analysis of the results,and the results are compared with the same circuit abroad.Based on these experiment results,the assessment conclusion of the device is given at last.

关 键 词：存储器 单粒子翻转 嵌入式系统 可编程逻辑门阵列 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]