晶体管栅形状对单粒子瞬态脉冲特性的影响研究  

Impact of Gate Shape of Transistor on Single Event Transient Pulse

作　　者：赵馨远[1] 张晓晨[1] 王亮[1] 岳素格[1] 

机构地区：[1]北京微电子技术研究所抗辐射加固工程中心,北京100076

出　　处：《微电子学与计算机》2014年第10期76-80,共5页Microelectronics & Computer

摘　　要：通过三维器件模拟仿真,研究了基于CMOS 0.18μm工艺下标准条形栅和环形栅结构MOS晶体管的单粒子瞬态响应.研究结果表明,单粒子轰击条形栅器件与环形栅器件产生的单粒子瞬态脉冲特性具有非常大的区别.分析了栅形状对单粒子瞬态的影响在PMOS和NMOS器件中的不同机理,对单粒子瞬态加固设计具有指导性意义.3D-TCAD simulations in a 0.18μm process are used to show the effect of gate shapes on the single event transients of both PMOS and NMOS.The result turn out that the SET pulse widths of enclosed layout transistors are much smaller than the standard layout transistors.The mechanisms and process that affect the charge collection in both PMOS and NMOS of different layout structures are studied.And suggestions are made towards design guidelines and hardening approaches.

关 键 词：单粒子瞬态脉冲 瞬态脉宽 环形栅 寄生双极放大效应 

分 类 号：TN386[电子电信—物理电子学]