Au/Ti/W/Ti与n-GaAs欧姆接触的特性研究  

Electrical and structural properties of Au/Ti/W/Ti ohmic contacts to n -GaAs

作　　者：刘文超[1] 李冰寒[1] 周健[1] 夏冠群[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2003年第4期429-431,共3页Journal of Functional Materials and Devices

摘　　要：用磁控溅射系统和快速合金化法制备了Au/Ti/W/Ti多层金属和n-GaAs材料的欧姆接触,用传输线法对其比接触电阻进行了测试,并利用俄歇电子能谱(AES)和X射线衍射图谱(XRD)对接触的微观结构进行了研究。结果表明该接触在700℃时比接触电阻为1.5×10^(-4)Ω·cm^2,快速合金化后呈现欧姆特性可能与接触界面处生成的TiAs相有关。Thermally stable ohmic contacts of Au/Ti/W/Ti on n - GaAs were fabricated using magnetic spattering unit and rapid thermal annealing. The electrical and structural properties of Au/Ti/W/Ti ohmic contacts were studied by measuring the contact resistivity and analyzing Auger Energy Spectrum (AES) and X -ray Diffraction (XRD) spectrum. Electrical measurement shows a minimum ohmic contact resistivity of 1. 5 μ10-4Ωcm2 at 700℃. It is found that a TiAs phase in the interface between metal multilayer and n - GaAs is responsible for the ohmic contact performance.

关 键 词：砷化镓 欧姆接触 磁控溅射 合金化 多层金属 接触电阻 俄歇电子能谱 XRD 

分 类 号：TN305.93[电子电信—物理电子学] TN304.2