基于0.2μm GaAs PHEMT工艺的压控振荡器IC设计  

Design Of Fully Integrated Voltage Controlled Oscillator Using 0.2 μm GaAs PHEMT Technology

作　　者：孙玲[1] 朱恩[1] 孟凡生[1] 吴春红[1] 费瑞霞[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《电子器件》2003年第4期341-343,340,共4页Chinese Journal of Electron Devices

基　　金：国家863计划资助项目(2001AA121074)

摘　　要：给出了一个采用0 2μmGaAsPHEMT工艺设计的全集成差分负阻式LC压控振荡器电路,芯片面积为0 52×0 7mm2。采用3 3V正电源供电,测得输出功率约-11 22dBm,频率调节范围6 058GHz～9 347GHz;在自由振荡频率7 2GHz处,测得的单边带相位噪声约为-82dBc/Hz@100kHz.A fully integrated LC VCO with a tuning range of 3 GHz is presented. It is realized in 0.2 μm GaAs PHEMT process with a 3.3 V supply. The output power is about -11.22 dBm. A phase noise of -82 dBc/Hz was measured at 100 kHz offset from a carrier frequency of 7.2 GHz. The core size is 0.52×0.7 mm^2.

关 键 词：压控振荡器 锁相环 GAAS PHEMT工艺 

分 类 号：TM855[电气工程—高电压与绝缘技术]