基于0.18μm CMOS工艺的6 GHz环形压控振荡器设计  

6GHz Ring VCO Design Using 0.18 μm CMOS Technology

作　　者：吴春红[1] 朱恩[1] 王雪艳[1] 郁炜嘉[1] 程树东[1] 王志功[1] 

机构地区：[1]东南大学射频与光电集成电路研究所

出　　处：《电子器件》2003年第4期438-440,437,共4页Chinese Journal of Electron Devices

摘　　要：基于0 18μmCMOS工艺设计的全差分环形压控振荡器电路,芯片总面积为0 65×0 79mm2,1 8V电源供电,总功耗155mW,中心频率6GHz,调谐范围1GHz。可应用于IEEE802 11aWLAN系统。This paper describes a 6 GHz fully differential ring voltage controlled oscillator (VCO) based on 0.18um CMOS technology. The chip size is 0.65×0.79 mm^2.The power consumption is 155 mW at a supply voltage of 1.8 V. The VCO oscillates at 6 GHz center frequency with 1GHz tuning range. It meets the requirement for IEEE802.11a WLAN standard.

关 键 词：射频集成电路 压控振荡器 CMOS工艺 

分 类 号：TM855[电气工程—高电压与绝缘技术]