BST铁电薄膜压控微波器件  

Voltage Controlled Microwave Electronic Components Using BST Ferroelectric Thin Films

作　　者：陆清芳[1] 李德红[1] 何世明[1] 刘兴钊[1] 李言荣[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《电子元件与材料》2003年第12期36-38,共3页Electronic Components And Materials

摘　　要：作为一种典型的钙钛矿结构铁电体,BST具有极强的非线性介电性质,其介电常数随外加直流偏压变化,同时BST薄膜易于与微带共面波导等电路集成,能有效减小电路体积,因此可广泛应用于压控变容器、滤波器、移相器、振荡器等微波器件中。该类器件调谐速度极快,损耗低,工作频带宽,功率承载能力强,可调性好。介绍了BST薄膜的非线性介电性质与其在微波应用中的国外研究现状。As one of the important perovskite ferroelectrics, BST thin films are potential candidates for application in frequency-agile microwave electronic components due to their large field-dependent dielectric constant, such as varactors, voltage tunable filters, phase shifters and voltage controlled oscillators. The recent progress on this field are reviewed, including the structure, nonlinear dielectrics properties and microwave application.

关 键 词：BST铁电薄膜 介电性质 钙钛矿结构铁电体 压控变容器 压控微波器件 

分 类 号：TN61[电子电信—电路与系统] TM221[一般工业技术—材料科学与工程]