静态存储器中子单粒子翻转截面的预测模型  

Neutron induced single event upset cross section predictive modeling for SRAM

作　　者：解磊[1] 周婉婷[2] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999 [2]电子科技大学通信抗干扰技术国家级重点实验室,四川成都611731

出　　处：《太赫兹科学与电子信息学报》2015年第6期976-979,共4页Journal of Terahertz Science and Electronic Information Technology

摘　　要：中子是近地空间和核爆的主要辐射源之一,中子二次反应诱发的单粒子效应极大地影响了电子元器件的可靠性。本文针对商用体硅工艺静态存储器(SRAM)单元提出了一种中子饱和翻转截面预测模型。通过一个电路级的仿真模型,对应于辐射作用距离的线性电荷沉积(LET)效应可以通过基于SPICE仿真曲线来表现,进而用来预测翻转截面。该方法简单有效,预测结果与130 nm体硅工艺的中子实验结果吻合。Neutron is the predominant radiation source in terrestrial cosmic rays and nuclear explosion. Neutron can indirectly induce single event effect by secondary reaction, which will significantly reduce the reliability of electronic components. A neutron saturated cross section prediction model is proposed for a Static Random Access Memory(SRAM) cell designed by commercial Si technology. Through a circuit-level simulation model, the radiation effects can be shown as the SPICE-simulated curves of Linear Energy Transfer(LET) versus the corresponding affected distances, which are used for upset cross section prediction. The proposed method is simple and effective. Its calculated results are in good agreement with experimentally measured results reported for SRAM fabricated in 130 nm bulk silicon process.

关 键 词：中子 单粒子翻转 饱和翻转截面 线性电荷沉积 静态存储器 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]