Au薄膜溅射功率对ZnO/Au复合薄膜质量的影响  

Performance of ZnO/Au composite film at different sputtering powers

作　　者：王旭光[1] 姚明秋[1] 席仕伟[1] 徐韩[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2015年第6期980-982,共3页Journal of Terahertz Science and Electronic Information Technology

摘　　要：在ZnO薄膜上采用不同溅射功率制作了Au薄膜,研究不同溅射功率对Au膜成膜速率、结晶质量和结合力的影响,表明在本实验中100 W功率下Au膜的成膜质量比较好。同时对Zn O薄膜电阻的影响进行了研究,结果表明溅射功率越高,ZnO导通的可能性越大,通过实验,溅射工艺在100 W下制备的Au薄膜对ZnO电阻影响最小。Au films sputtered at different sputtering powers on ZnO surfaces are deposited. The effects of different sputtering powers on the deposition rates, crystal quality and bonding force between Au and ZnO film are researched. Au films at sputtering power of 100 W features the best performance compared with that at other sputtering powers. The influences of different sputtering powers on the resistances of ZnO membranes are studied as well. The results show that the higher the sputtering power, the more likely the ZnO resistance is broken-down; and an Au film at the sputtering power of 100 W shows the smallest influence on ZnO resistance.

关 键 词：溅射 溅射功率 Au薄膜 ZnO电阻 

分 类 号：O484.1[理学—固体物理]