SOI近红外Si_(0.8)Ge_(0.2)/Si横向pin探测器的研制  

Development of Near-infrared Si_(0.8)Ge_(0.2)/Si Lateral pin Photodetector Fabricated on SOI

作　　者：莫太山[1] 张世林[1] 郭维廉[1] 郭辉[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院微电子系,天津300072

出　　处：《光电子．激光》2003年第12期1277-1280,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(69836020);国家重点基础研究973资助项目(2002CB311905)

摘　　要：给出了SOI近红外Si0.8Ge0.2/Si横向pin光电探测器的设计和制作过程。对制得的样管进行了典型光电参数的测试。测试结果表明,探测器的响应波长范围为0.4～1.3μm,峰值响应波长在0.93～0.97μm,峰值波长下响应度达0.38μA/μW,与Si光电探测器相比,出现明显的响应波长范围和响应峰值波长红移,光电性能达到了预先的设计目标。The whole design and fabrication of the near-infrared Si0.8Ge0.2/Si lateral pin photodetector fabricated on silicon on insulator (SOI) were particularly discussed. The typical photoelectric parameters were measured. The results indicate that the photoresponse ranges from 0.4 to 1.3 μm, the peak wavelength reaches among 0.93-0.97 μm, and it attains a responsivity of 0.38 μA/μW at the peak wavelength. The experimental data matches well with our respected results.

关 键 词：SOI 近红外 Si0.8Ge0.2/Si横向pin探测器 响应波长 响应峰值 光电性能 

分 类 号：TN215[电子电信—物理电子学]