Undoped semi-insulating indium phosphide (InP) and its applications  

作　　者：DONG Hongwei, ZHAO Youwen, JIAO Jinghua, ZENG Yiping, LI Jimin & LIN Lanying Materials Science Center, Institute of Semiconductors, Chinese Acad-emy of Sciences, Beijing 100083, China Correspondence should be addressed to Dong Hongwei 

出　　处：《Chinese Science Bulletin》2003年第4期313-314,共2页

关 键 词：INP 磷化铟 非掺杂半绝缘材料 应用 基底层 

分 类 号：TN304.23[电子电信—物理电子学]