SOI/SDB薄膜全耗尽隐埋n-MOSFET导电机理研究  

A Study on the Conduction Mechanism of Thin-Film SOI/SDB MOSFETs With Fully-Depleted Buried n-Channel

作　　者：周天舒[1] 黄庆安[1] 童勤义 

机构地区：[1]东南大学微电子中心,南京210018

出　　处：《微电子学》1992年第5期42-46,共5页Microelectronics

摘　　要：本文详细研究了SOI/SDB薄膜全耗尽隐埋n沟 MOSFET的器件结构及导电机理,建立了明确的物理解析模型,给出了各种状态下器件工作电流的解析表达式。最后,将解析模型的计算结果与实验数据进行了比较和讨论。Conduction mechanism for thin film SOI/SDB MOSFETs with fully depleted buried n-channel is explored in detail in the paper. A definite physically analytical model has been developed and analytical expressions for operating current in the device under different conditions have been provided. Finally,calculated results based on this model and the experimental results are compared and discussed.

关 键 词：薄膜 MOSFET器件 导电机理 

分 类 号：TN386.1[电子电信—物理电子学]