铁电随机存储器的研究进展  

Research Development of Ferroelectrical Random Memories

作　　者：吴淼[1] 胡明[1] 王兴[1] 阎实[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2003年第6期472-475,共4页Piezoelectrics & Acoustooptics

摘　　要：铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器,以其高密度、高速度、非易失性及抗辐射性而大大优于目前任何一种半导体存储器。该文介绍了铁电存储器的存储原理、特点、基本存储单元、研究进展、应用及存在的问题,并指出1T结构的铁电随机存储器(FRAM)将会成为下一代随机存储器。Ferroelectric memories,which are the combination of ferroelectric films and semiconductor IC,have many advantages,such as high density of integration,high speed,the character of non-volatile and anti-radioactivity,over most of the current semiconductor IC. The basic principles of information storage,characters and the key cell of ferroelectric memories are briefly introduced. The development of the present researches,the applications of FRAM and existing problems are also discussed. We expect the 1-transistor(1T)FRAM to be the next generation FRAM.

关 键 词：铁电存储器 铁电薄膜 铁电随机存储器(FRAM) 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]