大直径硅片超精密磨削技术的研究与应用现状  

PRESENT STATUS OF RESEARCH AND APPLICATION IN ULTRA-PRECISION GRINDING TECHNOLOGY OF LARGE-SCALE SILICON WAFERS

作　　者：康仁科[1] 田业冰[1] 郭东明[1] 金洙吉[1] 

机构地区：[1]大连理工大学机械学院现代制造技术研究所,辽宁大连116024

出　　处：《金刚石与磨料磨具工程》2003年第4期13-18,25,共7页Diamond & Abrasives Engineering

基　　金：国家自然科学基金资助项目 (50 2 90 1 0 1 );国家"863计划"项目 (2 0 0 2AA42 1 2 30 )

摘　　要：随着IC制造技术的飞速发展 ,为了增加IC芯片产量和降低单元制造成本 ,硅片趋向大直径化 ,原始硅片的厚度也相应增大以保证大尺寸硅片的强度 ;与此相反 ,为了满足IC封装的要求 ,芯片的厚度却不断减小 ,需要对图形硅片进行背面减薄。硅片和芯片尺寸变化所导致的硅片加工量的增加以及对硅片加工精度和表面质量更高的要求 ,使已有的硅片加工技术面临严峻的挑战。本文详细分析了传统硅片加工工艺的局限性 ,介绍了几种大直径硅片超精密磨削加工工艺的原理和特点 ,评述了国内外硅片超精密磨削技术与装备研究和应用的现状及发展方向 ,强调了我国开展大直径硅片超精密磨削技术和装备研究的必要性。With faster developing of IC manufacturing technology, the diameter of wafer trends to be larger in order to increase the yields of chips and reduce the cost per bit, at the same time, the thickness of prime wafer is also increasing to ensure the strength of wafer Contrarily, the chip thickness is decreasing to meet the requirements of IC package so that the backside thinning of pattern wafers is required Thus, it is the increase of the material removal amount caused by size changes of wafer and chip and the higher requirements of precision and surface quality of wafer that make the traditional wafer processing technology face the challenge In this paper, the limitations of the traditional wafer processing technology are analyzed in detail, the principle and characteristics of ultra precision grinding technologies used in IC manufacturing process are discussed, the present status and perspectives of the advanced grinding technologies and equipments applied in large diameter wafer processing and backside thinning are introduced, and the necessity and importance of researching and developing advanced grinding technology and equipment for large diameter wafers in our country is emphasized

关 键 词：IC芯片 硅片 超精密磨削 砂轮 磨床 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学] TG580.6[金属学及工艺—金属切削加工及机床]