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机构地区:[1]超硬材料国家重点实验室吉林大学原子与分子物理研究所,长春130023
出 处:《物理》1992年第5期280-285,共6页Physics
摘 要:金刚石薄膜的气相合成及应用研究近年来取得了飞速发展,气相合成金刚石薄膜的CVD方法已达20几种,最大的沉积速度已达到每小时930μm.硼掺杂金刚石薄膜的空穴载流子浓度已达到10~(18)cm~(-3),电阻率已达到10~(-2)Ω·cm,在硅衬底表面实现了金刚石薄膜的选择性生长.金刚石薄膜热沉使半导体锁相列阵激光器的输出功率提高了10%左右,金刚石薄膜作为刀具涂层使刀具的寿命得到提高,金刚石热敏电阻、发光管、场效应管等器件原型电子器件在实验上已获得成功.The preparation and application of diamond films have seen great progress in recent years. More than 20 methods have been reported and a maximum growth rate for diamond films of about 930 μm per hour has been achieved. For boron doped diamond films the maximum hole concentration measured is 10^(18)cm^(-3) and the specific resistance as low as 10^(-2) Ω ·cm Selective deposition of diamond films on Si wafers has been achieved. By using diamond film heat sinks in the thermal design of phase-locked semiconductor laser diode arrays, the output power of the diodes has been increased by approximately 10% The life-time of tools has been increased by use of diamond coatings. Simple diamond devices, such as thermistors, light diodes and FET's have been fabricated in some laboratories.
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