硅的可见光发射──通向全硅光电子集成之途  

Visible Light Emission from Silicon──The Route Towards All Silicon Optoelectronic Integration

作　　者：王迅[1] 侯晓远[1] 郝平海[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《物理》1992年第6期341-343,共3页Physics

摘　　要：由于Ｓｉ是一种禁带宽度只有１．１ｅＶ的间接带隙材料，其发光效率极低，因此长期以来Ｓｉ被认为是一种不可能用于制作可见光区光电器件的材料．但近一两年才出现的多孔硅光致发光现象，对人们的这种传统概念产生了巨大的冲击，一股多孔硅的研究热潮也正在兴起．本文将结合作者在多孔硅方面的工作，对多孔硅光致发光现象的研究背景、现状和潜在的应用作了较详细的介绍．Silicon is not considered to be a suitable material in optoelectronics because of its indirect and relatively small band gap After the first report on the porous silicon photo- luminescence, the study of porous silicon has become a fever-like activity in the field of semiconductors. In this paper , the background, progress, and promising applications of the visible, light emission from porous Si, including some of our preliminary results, are revi- ewed in more detail.

关 键 词：硅 可见光发射 多孔硅 

分 类 号：TN304.12[电子电信—物理电子学]