IC工艺中互连薄膜晶粒生长的实验和理论模型  

The Theoretical Model and Experiment for the Grain Growth of IC Interconnect Materials

作　　者：刘键[1] 黄榕旭 蒋聚小[1] 郑国祥[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海先进半导体公司,上海200233

出　　处：《固体电子学研究与进展》2003年第4期526-531,共6页Research & Progress of SSE

摘　　要：通过研究不同淀积温度下铝互连薄膜的晶粒形态 ,研究晶粒的生长规律。建立理论模型描述加热过程中薄膜晶粒的行为 ,可据此进行工艺模拟 ,对 IC制造工艺进行事前评估。根据薄膜晶粒生长的机理 ,得到晶粒尺寸和温度及时间的关系。由于薄膜晶粒的生长使表面能减小 ,晶粒的平均尺寸随生长时间增大。Obvious grain growth of IC intercon nect thin film has been observed in our experiment when ploycrystalline material is heated. It is believed that the surface energy associated with grain boundar y is minimized. We describe the movement of grain boundary during the process an d establish the theoretical model involving grain size, heat temperature, and ti me, which is very important for process simulation and manufacture prediction. F rom the experiment result, we confirm that the grain size distribution for a thi n film that has undergone normal grain growth is close to lognormal distribution .

关 键 词：超大规模集成电路 IC工艺 互连薄膜 晶粒生长 理论模型 表面能 对数正态分布 

分 类 号：TN47[电子电信—微电子学与固体电子学]