偏晶向(111)硅片闪耀光栅的设计  

Design of Blazed Silicon Grating by Deflecting Crystal Orientation (111) Silicon Wafer

作　　者：鞠挥[1] 张平[1] 王淑荣[1] 吴一辉[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,长春130022

出　　处：《微细加工技术》2003年第4期18-21,26,共5页Microfabrication Technology

基　　金：国家重点基础研究规划资助项目(973-G1999033107);中科院长春光机所创新工程资助项目(C02X01Z);青年基金资助项目(CO1Q07)

摘　　要：利用硅单晶的特殊结构可以设计出不同角度的闪耀光栅,再使用MEMS的紫外光刻、各向异性腐蚀等常规工艺就可以完成硅闪耀光栅的制作。设计了一种利用偏转晶向(111)硅片制作小角度闪耀光栅的方法,避免了利用其它晶向的硅片制作闪耀光栅的缺点。利用这种方法制作了线宽为4μm的硅闪耀光栅,使用原子力显微镜(AFM)进行了光栅表面形貌测试,得到平均表面粗糙度为110.94nm,试验结果表明制作的硅光栅样片具有良好光学特性的反射表面和光栅槽形。Blazed gratings with different blazed angles can be designed by the special structure of monocrystalline silicon wafers and fabricated by general MEMS processes, as ultraviolet lithography and anisotropic wet etching. A method to make silicon gratings with a small blazed angle isdesignedby deflecting crystal orientation (111) silicon wafer, avoidingsome defaults by other crystal orientation silicon wafer. A blazed silicon grating with 4 μm line width is fabricated by this method and the topography testing of the silicon grating surface has been carried on by AFM. The average roughness of the surface is 110.94 nm, and the experimental results indicate that the samples have good reflection surfaces and grating facets with excellently optical quality.

关 键 词：闪耀光栅 偏晶向硅片 体硅 湿法腐蚀 微制造 

分 类 号：TN305.7[电子电信—物理电子学]