共振隧穿二极管基础电路的模拟与分析  

Simulation and analysis of basic RTD-based circuits

作　　者：程玥[1] 许军[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微纳电子技术》2003年第7期579-582,共4页Micronanoelectronic Technology

摘　　要：简单介绍了RTD的器件特性和器件模型 ,用HSPICE模拟出RTD与电阻、MOS晶体管、RTD本身结合的电路特性。通过对不同电路参数I V特性的模拟和分析 。After an introduction of the device characteristics and the equivalent circuit model of RTD, the simulation results of several basic RTD based circuits by HSPICE are presented and analyzed, for the aim of providing help to understand RTD operation mechanism and construct complex RTD based circuits.

关 键 词：共振隧穿二极管 双稳态 HSPICE模拟 RTD HSPICE模拟 电路特性 

分 类 号：TN312.2[电子电信—物理电子学] TN402