纳电子器件  

Nanoelectronic devices

作　　者：郭荣辉[1] 赵正平[1] 刘玉贵[2] 武一宾[2] 吕苗[2] 杨拥军[2] 

机构地区：[1]西安电子科技大学,陕西西安710071 [2]河北半导体研究所,河北石家庄050051

出　　处：《微纳电子技术》2003年第7期557-561,共5页Micronanoelectronic Technology

摘　　要：随着电子器件的小型化 ,器件的尺寸已经到了介观尺寸 ,传统的器件日益接近其物理机理的禁区 ,一些新的介观器件随之出现。本文根据介观系统的新特点 ,介绍了几种典型的纳电子器件 ,并简单地介绍了量子干涉器件、共振隧穿器件、单电荷转移器件 。With the development of microelectronic fabrication technology, the electronic device dimension has reached mesoscopic scale, the operation theory of traditional devices has come to the forbidden zone, and some new mesoscopic scale devices come forth. Some typical nanoelectronic devices are introduced based on mesoscopic system theory. And quantum interference devices, resonant-tunneling devices, single electron transfer devices, quantum dot cellular automata, and the operation mechanism are also expounded.

关 键 词：纳电子器件 介观系统 量子干涉器件 共振隧穿器件 单电荷转移器件 工作机理 

分 类 号：TN603.5[电子电信—电路与系统]