LGS晶体的化学腐蚀及缺陷分布  

Chemical etching and defect distribution of langasite (La3Ga5SiO14) crystals

作　　者：黄庆捷[1] 孔海宽[1] 李军 高磊[1] 葛文伟[1] 张怀金[1] 胡小波[1] 江怀东[1] 王继扬[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东中晶光电子公司,山东济南250100

出　　处：《功能材料》2003年第2期184-186,共3页Journal of Functional Materials

基　　金：国家基础研究发展规划基金资助项目(G1998061403)

摘　　要：采用提拉法生长得到LGS单晶,采用磷酸作腐蚀剂,对LGS晶体做了一系列腐蚀实验。实验结果表明:对于不同方向晶面,腐蚀液的配比和腐蚀时间等条件各不相同。根据腐蚀坑可以判定,其极轴是二次轴[1120]方向,并可具体确定极轴方向。关于腐蚀坑的分布可以判定,在现行条件下生长的晶体具有较高的质量。La3 Gas SiO14 crystal was grown by czochralski method. Chemical etching was carried out on the grown crystals by using H3PO4-based etchants. It was found that the proportion of etchants and the etching time varied with different facets of the sample.The pit shapes showed the two-fold [1120] axis of the crystal was the polar axis. The observation of the defects distribution revealed that the quality of the as grown LGS crystal was good.

关 键 词：LGS晶体 化学腐蚀 缺陷分布 提拉法 磷酸 晶体生长 硅酸镓镧 压电材料 

分 类 号：O78[理学—晶体学]