直接覆铜陶瓷板界面及其高温行为研究  

Research on Metallization and Interface Behavior of Direct Plated Copper Ceramic Substrates

作　　者：张珊珊[1] 杨会生[1] 颜鲁春 庞晓露[1] 高克玮[1] 李磊 李中正 

机构地区：[1]北京科技大学,北京100083 [2]临淄市临淄银河高技术开发有限公司,山东淄博255400

出　　处：《真空电子技术》2016年第5期1-6,共6页Vacuum Electronics

摘　　要：本研究利用大电流高密度等离子体溅射沉积技术,在Al_2O_3和AlN陶瓷板的表面沉积不同的过渡层和铜层,经电镀将真空溅射铜层进行加厚,实现陶瓷基板金属化。通过界面结合强度测试,分析了不同过渡层对界面结合强度的影响;利用SEM、DTA、XRD等研究了直接覆铜陶瓷板截面形貌及在高温退火后的界面行为。结果表明,与无过渡层和AlO_x过渡层相比Cr、Ti可大幅度提高界面粘附强度,在550℃退火后Cr和Ti在界面处和铜层发生合金化作用,甚至生成金属间化合物,Cr和Ti元素与Al_2O_3和AlN基体以及铜层具有强的相互作用,过渡层的引入可大幅度提高覆铜层和陶瓷的结合强度,从而有效提高陶瓷覆铜板的使用可靠性。Different transition layers and copper were deposited by large current high density plasma sputtering deposition technology on Al_2O_3 and AlN ceramic plate,and then the copper layer was thickened via electroplating to realize ceramic substrate metallization.Through strength test,effects of different transition layers on interface bonding strength were analyzed.SEM,DTA and XRD were used to study the morphology of ceramic substrates and copper/ceramic interface behaviors after high temperature annealing.The results show that Cr and Ti transition layers can greatly improve the interface adhesion strength when compared with AlOxtransition layer or no transition layer situation.Cr and Ti alloy with copper layer,or even generate intermetallic compound after 550℃annealing,and so Cr and Ti layers have strong interaction with Al_2O_3 and AlN substrates and copper layer.The introduction of transition layer can greatly improve the bonding strength of the ceramic and copper layer,thus effectively improve the reliability of direct plated copper ceramic substrates.

关 键 词：直接镀铜 陶瓷基板 陶瓷金属化 

分 类 号：TN41[电子电信—微电子学与固体电子学]