退火对GaAs窗口晶体力学性能的影响  

Effect of Annealing on Modulus of Rupture of GaAs Window Crystals

作　　者：黎建明[1] 屠海令[1] 郑安生[1] 

机构地区：[1]北京有色金属研究总院国家半导体材料工程研究中心,北京100088

出　　处：《Journal of Semiconductors》2004年第1期43-47,共5页半导体学报（英文版）

摘　　要：在 L EC Ga As晶片中 ,存在相当大的弹性应变 ,在高温退火后 ,晶片的晶格参数的相对变化量不到原生晶片的 70 % ,残余应力得以部分释放 ,从而减小残余应力诱生断裂的可能性 ,提高了 Ga As晶体的断裂模数 .原生 Ga As晶体加工的样品的断裂模数平均值约为 135 MPa,而退火 Ga As晶体加工的样品的断裂模数平均值更高 ,约为15 0 MPa,断裂模数最高值达 16 3MPa.A remarkable spatial variation of elastic strain exists in LEC GaAs window wafers;and the strain can be released greatly by window wafer annealing.The lattice parameter variations in annealed LEC GaAs wafers are less than 70% of those in the as-grown wafers.After mechanical-chemical polishing,the average value of modulus of rupture for as-grown GaAs samples is about 135MPa;and the average value of modulus of rupture for annealed GaAs samples is about 150MPa with the highest value of about 163MPa,which due to the decreasing of the residual stresses by high-temperature window wafer annealing.

关 键 词：GAAS 断裂模数 退火 

分 类 号：TN242[电子电信—物理电子学]