栅氧化层击穿的统一逾渗模型  

A unified percolation model for gate oxide breakdown

作　　者：马仲发[1] 庄奕琪[1] 杜磊[1] 包军林[1] 万长兴[1] 李伟华[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2004年第1期54-58,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(69671003)

摘　　要：综合E模型和1/E模型中两种不同的缺陷产生机制和逾渗理论,建立了栅氧化层击穿过程中缺陷产生和击穿触发的统一逾渗模型.该模型认为栅氧化层的击穿触发是由于氧化层中氧空位等缺陷所形成的定域态扩展化的结果,并对氧空位等缺陷的产生动力学进行了统一的描述,使得该模型无论在高场强还是低场强情况下所得的结果,均能较好地描述氧化层击穿过程,从而对长期以来有关栅氧化层击穿的E模型和1/E模型之争做出了较为合理的解释.Based on the Percolation theory and defects creation mechanisms of both E model and 1/E model, a unified percolation model for gate oxide breakdown is brought forward. The trigging mechanism of gate oxide breakdown is believed to be the extending of the localized states induced by the defects such as oxygen vacancy in an oxide. The defect creation dynamics such as oxygen vacancy is described synthetically. As a result, the results of this model both in a high electric field and in a low electric field fit well with the experimental data. So, the long-existing dispute between 1/E and E models is settled.

关 键 词：栅氧化层 击穿 逾渗模型 缺陷产生机制 MOS集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]