Ni/4H-SiC肖特基二极管高温特性研究  

Characterisitics of the Ni/4H-SiC Schottky barrier diodeat high temperatures

作　　者：王悦湖[1] 张义门[1] 张玉明[1] 陈锐标[1] 王雷[1] 周拥华[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《西安电子科技大学学报》2004年第1期63-66,75,共5页Journal of Xidian University

基　　金：国家部委十五重点资助项目(41308060107)

摘　　要：采用自行研制的工作在800℃的半导体器件高温测试装置,对Ni/4H SiC肖特基二极管的伏安特性在常温297K至677K的温度范围内进行了测量,表明温度升高对正向特性的影响非常显著,而对较低偏置(30V以下)条件下的反向特性影响则比较小.对实验结果进行了比较分析,I V特性测量说明镍4H SiC肖特基二极管有较好的整流特性,在正向偏压条件下,热电子发射是其主要的输运机理,理想因子在297～677K的温度范围内从1 165增加到1 872,肖特基势垒高度的变化范围为0 916～2 117eV,正向导通电压为0 5V.The I-V characteristics of the Ni/4H-SiC Schottky Barrier Diode(SBD) are measured first in the temperature range from 297?K to 677?K. The diode shows an excellent forward I-V characteristic. The devices present a behavior in accordance with the thermionic emission theory in the forward bias. The temperature influences obviously the forward characteristic of the SBD. The influence on the reverse current is small in the range of the applied voltages of less than 30?V. The ideal factor n ranges from 1.165 to 1.872, the Barrier height ranges from 0.916 to 2.117?eV, and the threshold voltage is 0.5?V.

关 键 词：碳化硅 肖特基势垒二极管 伏安特性 热电子发射理论 高温特性 器件结构 

分 类 号：TN311.7[电子电信—物理电子学]