Hot-Carrier-Induced Defects Distribution and Coupling Effect of the Front and Back Interface Degradation in SOI nMOSFET＇s Operating in a Bi-MOS Hybrid Mode  

作　　者：HUANGRu WANGJinyan HEJin YUMin ZHANGXing WANGYangyuan 

机构地区：[1]InstituteofMicroelectronics,PekingUniversity,Beijing100871,China

出　　处：《Chinese Journal of Electronics》2004年第1期69-74,共6页电子学报（英文版）

摘　　要：In this paper based on the forward gated-diode configuration, the hot carrier behavior of the SOI (Silicon-on-insulator) nMOSFET's operating in a Bi-MOS hybrid mode (abbreviated as Bi-nMOSFET) is investigated. The performance degradation of SOI Bi-nMOSFET's with long channel and short channel is compared with the corresponding SOI nMOSFET's in terms of the peak diode current. The distribution of the hotcarrier generated defects along the channel direction for long channel and short channel Bi-nMOSFET's is studied, as well as the coupling effect of the front and back interface degradation. In addition, the different influence of the generated defects on the front interface and back interface is estimated. The underlying mechanism of the device degradation is qualitatively explained.

关 键 词：热载流子 选通二极管 SOI MOSFET Bi-MOS混合方式 耦合效果 

分 类 号：TN311.7[电子电信—物理电子学]