电子封装中的局部镀银研究  

Investigation of Partial Silver-Piating in Electronic Packaging

作　　者：宁洪龙[1] 黄福祥[1] 马莒生[1] 耿志挺[1] 黄辉[1] 卢超[1] 

机构地区：[1]清华大学,北京100084

出　　处：《稀有金属材料与工程》2004年第2期176-178,共3页Rare Metal Materials and Engineering

摘　　要：采用光化学蚀刻的技术,制备出细图案的引线框架,然后在引线框架的局部进行电镀镀银。分析了对银镀层质量产生影响的因素,发现预处理工艺和电流分布是影响银镀层质量的关键因素:电流密度会显著影响镀层表面粗糙度,电流密度为0.5A/dm^2时,可以得到表面光滑的镀层;电镀时间是控制镀层厚度的另外1个因素,当电镀时间为12min～16min时,将形成比较均匀的局部镀银层。A photolithograph technology is used to fabricate patterned fine lead frame, and the factor of partial silver-plating is discussed. We find the pretreatment and electroplating technology is the key of plating layer quality: 1, current density can influence the roughness of silver plating surface, if it is 0.5 A/dm(2), we can get the smooth silver plating; 2, electroplating time also plays an important role in controlling plating thickness, we can gain the even silver plating after 12 minsimilar to16 min plating.

关 键 词：电子封装 引线框架 局部镀银 

分 类 号：TG174[金属学及工艺—金属表面处理]