微氮直拉硅单晶中氧化诱生层错透射电镜研究  

Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

作　　者：徐进[1] 杨德仁[1] 储佳[1] 马向阳[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《物理学报》2004年第2期550-554,共5页Acta Physica Sinica

基　　金：国家自然科学重点基金 (批准号 :5 0 0 3 2 0 10 );国家 863项目 (批准号 :2 0 0 2AA3 1)资助的课题~~

摘　　要：利用透射电镜研究了热氧化过程中含氮 (NCZ)和不含氮 (CZ)直拉硅单晶的氧化诱生缺陷 .研究表明 ,NCZ中的氧化诱生层错的尺寸随着湿氧氧化时间的延长而减小 ,并有冲出型位错产生 .而在CZ中 ,生成了大量的多面体氧沉淀 ,并且随着热氧化时间的延长 。The extended-defects generated during oxidation in both of nitrogen-doped Czochralski (NCZ) silicon and common Czochralski (CZ) silicon have been investigated by Transmission Electron Microscopy(TEM). It is found that the size of the oxidation-induced stacking faults (OSFs) decreases with the increase of oxidation time in NCZ silicon, and punched-out dislocations could also be observed. While in CZ silicon, there are many polyhedral oxygen precipitates generated, and the size of OSFs increases with increasing oxidation time.

关 键 词：直拉单晶硅 透射电镜 氧化诱生层错 晶体缺陷 热氧化时间 层错尺寸 

分 类 号：O782[理学—晶体学]