SiN_x薄膜热物性参数实验测量与分析研究  

Measurement and analysis of thermal properties of SiN_x thin films

作　　者：余雷[1] 余建祖[1] 王永坤[1] 

机构地区：[1]北京航空航天大学航空科学与工程学院,北京100083

出　　处：《物理学报》2004年第2期401-405,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :5 99760 0 4)资助的课题~~

摘　　要：采用一种新的实验测量方案 ,将金属加热单元与温度探测单元合二为一 ,间接获得了在半导体和微电子学MEMS领域内有重要用途的SiNx 薄膜的导热系数、发射率、比热容和热扩散系数 ,并对实验结果进行了不确定度分析 ,为微电子电路设计和掩模成型工艺等提供了可靠的热物性数据 .实验结果表明 ,薄膜的导热系数、发射率、热扩散系数远比相应体材质低 ,而且还与温度、厚度有关 ,尺寸效应显著 。The thermal conductivity, emissivity, specific heat capacity and thermal diffusivity of SiN x thin films which are widely used in semiconductor and microelectronics MEMS are measured using a novel experimental method which combines the heater and the bolometer in one unit. The obtained reliable thermal properties are very useful for microelectronic circuits design and mask processing. The experimental data show that the thermal conductivity, emissivity and thermal diffusivity of SiN x thin films are much lower than those of the bulk and depend on the temperature and thickness of the thin films, and the size effect of SiN x thin films is notable. However, the specific heat capacity of SiN x thin films is almost the same as that of the bulk.

关 键 词：薄膜物理 氮硅薄膜 微尺度传热 热物性参数 导热系数 发射率 比热容 热扩散系数 不确定度分析 光电子技术 

分 类 号：O484.4[理学—固体物理] TN201[理学—物理]