The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD  

作　　者：CHENChang-Chun LIUZhi-Hong HUANGWen-Tao DOUWei-Zhi ZHANGWei TSIENPei-Hsin ZHUDe-Zhang 

机构地区：[1]InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084 [2]ShanghaiInstituteofAppliedPhysics,theChineseAcademyofSciences,Shanghai201800

出　　处：《Nuclear Science and Techniques》2003年第4期238-241,共4页核技术（英文）

基　　金：the National High Technology and Research Development Program(863 Program)of China(No.2002AA321230);partially supported by the National Natural Sciences Foundation of China(No.10075072)

摘　　要：Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) were characterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction (HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventional furnace annealing and rapid thermal annealing with temperature between 750℃ and 910℃. Both strain and its relaxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported in other literatures. The rapid thermal annealing at elevated temperature between 880℃ and 910℃ for very short time had almost no influence on the strain in Si0.84Ge0.16 epilayer. However, high temperature (900℃@) furnace annealing for 1h prompted the strain in Si0.84Ge0.16 layer to relax.

关 键 词：Si/SiGe/Si异质结构 热平衡 HRXRD 超高真空化学气相沉积 UHVCVD X射线衍射 

分 类 号：TL35[核科学技术—核技术及应用]