射频溅射法制备掺铂TiO_2薄膜的基本性质  

Basic Properties of Pt-Doped TiO_2 RF Sputtered Thin Films

作　　者：何永华[1] 于国萍[1] 魏正和[1] 曾志锋[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《武汉大学学报（理学版）》2004年第1期51-54,共4页Journal of Wuhan University:Natural Science Edition

基　　金：国家自然科学基金资助项目(59871033)

摘　　要：用射频反应溅射法制备了掺铂的TiO2薄膜.用X射线衍射仪(XRD),紫外 可见(UV vis)光谱仪,电子扫描显微电镜(SEM)和X光电子能谱分析仪(XPS)对薄膜的基本性质进行了表征.研究结果表明:掺铂可以显著促进锐钛矿相的生长;TiO2薄膜在紫外的吸收边发生红移,其光谱响应范围得到了提高;铂氧化物的分解,促使薄膜表面出现了分散分布的微米尺寸岛状突出物,同时导致单质铂在薄膜表面发生富集.Pt-doped TiO_2 thin films were prepared by RF reactive sputtering.The doped TiO_2 films were characterized by XRD,UV-vis, SEM and XPS. The results showed that: Pt could accelerate the formation of anatase; the absorption band Red-Shift occurred,which improved the absorption spectrum range of the films; something like island formed at the surface of the films because of the decomposition of Pt Oxide, and Pt concentrated on the surface of the films.

关 键 词：射频溅射法 制备 掺铂 二氧化钛薄膜 富积 表面形貌 

分 类 号：TN304.055[电子电信—物理电子学] TN305.92