热壁外延法生长Zn_(1-x)Mn_xSe半磁半导体薄膜  

GROWTH OF Zn_(1-x)Mn_xSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE

作　　者：王杰[1] 吕宏强[1] 沈军[1] 李哲深[1] 王建宝[1] 沈孝良[1] 

机构地区：[1]复旦大学

出　　处：《应用科学学报》1992年第2期161-166,共6页Journal of Applied Sciences

摘　　要：作者用热壁外延方法在(100)GaAs衬底上生长Zn_(1-x)Mn_xSe拉半磁半导体薄膜,并用X射线衍射(XRD)、喇曼散射、俄歇电子能谱(AES)等技术对薄膜性能作了研究.实验结果表明已成功地生长出(100)Zn_(1-x)Mn_xSe单晶薄膜,其中x最大达到0.17.Zn1-xMNxSe films are grown on the (100) GaAs substrate by hot wall epitaxy. The films are studied by X-ray diffraction, Raman and AES. The results show thai Single crystal (100)Zn1-xMnxSe films have been gotten and that x can be up to 0.17.

关 键 词：薄膜 热壁外延 半磁半导体 ZnMnSe 

分 类 号：TN304.055[电子电信—物理电子学]