微波功率器件及其材料的发展和应用前景  

The Utilities and The Prospect of The Microwave Power Device and Its Material

作　　者：文剑[1] 曾健平[1] 晏敏[1] 

机构地区：[1]湖南大学应用物理系,长沙410082

出　　处：《材料导报》2004年第2期33-37,共5页Materials Reports

摘　　要：介绍了微波功率器件的发展和前景,对HBT,MESFET和HEMT微波功率器件材料的特点和选取,以及器件的特性和设计做了分类说明。着重介绍了SiGe合金、InPSiC、GaN等新型微波功率器件材料。并对目前各种器件的最新进展和我国微波功率器件的研制现状及与国外的差距做了概述与展望。This paper introduces the utilities and the prospect of the microwave power device,and shows the design methods and the properties of some microwave power devices individually, including HBT, MESFET and HEMT,and the property and the choice of these devices materials as well. Emphasis is laid on the introduction of some new types of microwave power device materials that include SiGe alloy,SiC and GaN. It also reviews the current development of these devices, the progress of our country' s current research and the gap between China and the developed countries. Prospect in this field is discussed.

关 键 词：微波功率器件 化合物半导体 电磁波 晶体管 二极管 

分 类 号：TN304.2[电子电信—物理电子学]