IC卡中薄芯片碎裂失效机理的研究  

Fracture of thin silicon die used in IC card

作　　者：倪锦峰[1] 王家楫[1] 

机构地区：[1]复旦大学国家微分析中心,上海200433

出　　处：《半导体技术》2004年第4期40-44,共5页Semiconductor Technology

摘　　要：薄/超薄芯片的碎裂占据IC卡早期失效的一半以上,其失效模式、失效机理亟待深入研究。本文分析了芯片碎裂的失效模式和机理,并结合实际IC卡制造工艺以及IC卡失效分析实例,就硅片减薄、划片、顶针及卡片成型工艺对薄IC芯片碎裂的影响进行深入探讨。The fracture of thin/ultra-thin silicon dies accounts for half of the failures of IC cards,and its failure modes and failure mechanism are not well understood then. The physical mechanismof die fracture is introduced and the impacts of the wafer thinning, dicing, ejector pin and mouldingprocesses of IC cards to the fracture of thin/ultra-thin silicon dies are investigated with regard to thearts and crafts and failure analysis of IC cards.

关 键 词：IC卡 薄芯片 失效机理 碎裂 划片 顶针 卡片成型 

分 类 号：TN405[电子电信—微电子学与固体电子学]