利用界面固定负电荷在MIP-Al_xGa_(1-x)As中构造感应势的理论计算及其太阳电池的实验研究  

STUDY OF INDUCED POTENTIAL FORMED IN MIP-Al_xGa_(1-x)As BY FIXED NEGATIVE CHARGES AT INTERFACE

作　　者：袁海荣[1] 陈庭金[1] 涂洁磊[1] 王履芳[1] 

机构地区：[1]云南师范大学太阳能研究所,昆明650092

出　　处：《太阳能学报》2004年第1期104-110,共7页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金资助项目(59966002)

摘　　要：介绍利用界面固定负电荷在MIP-AlxGa1-xAs中产生的感应势,并用于提高Al1-xGaxAs/GaAs太阳电池光电转换效率的构想。提出了分段计算求解泊松方程的数值计算方法。报道了利用分段数值计算,得到不同界面固定负电荷密度下,在不同掺杂浓度的半导体P-AlxCa1-xA5中界面附近的价带曲线Ev(x),以及Ev(0)值,空穴积累区宽度w值和表面空穴浓度p(0)值。文中还报道了基于这种思想所研制太阳电池的实验结果。Induced potential formation in MIP-AlxGa1- xAs by introducing negative charges fixed at the interface was proposed. The interface barrier can be applied to improved efficiency of Al1 -xGaxAs/GaAs solar cells. A numerical solution method named section-by-section method was introduced to solve the Poisson equation. Valence band profile and electrical field in the semiconductor under different fixed charge density and doping concentration was obtained using section-by-section method. The experimental results of obtained solar cells based on the design were reported as well.

关 键 词：ALGAAS 界面固定电荷 势垒 泊松方程 

分 类 号：TK511.4[动力工程及工程热物理—热能工程]