室温半导体核辐射探测器新材料及其器件研究  

Studies of New Materials and Devices for Room-temperature Nuclear Radiation Detectors

作　　者：朱世富[1] 赵北君[1] 王瑞林[1] 高德友[1] 韦永林[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2004年第1期6-12,共7页Journal of Synthetic Crystals

基　　金：国家863计划(2002AA325030);国家自然科学基金(No.60276030)资助项目

摘　　要：本文论述了室温半导体核辐射探测器新材料及其探测器的研究发展过程和最新动态,分别介绍了几种主要室温半导体核辐射探测器新材料晶体的组成、结构、性能及其探测器的制备技术,主要应用情况。结果表明:HgI2、CdZnTe和CdSe单晶体是性能优异的室温半导体核辐射探测器新材料,用其制作的探测器,可在室温下广泛用于环境监测、核医学、工业无损检测、安全检查、核武器突防、航空航天、天体物理和高能物理等领域。因此,近年来对大尺寸高质量HgI2、CdZnTe和CdSe单晶体及其室温核辐射探测器的研究,已成为高技术新材料领域的前沿研究课题。This paper discussed the development process and recent trends of semiconductor materials and detectors for room temperature nuclear radiation detection. The crystal composition, structure, properties, detectors preparation technology and applications of the main semiconductor materials for room temperature nuclear radiation detectors were introduced. The results show that HgI_2, CdZnTe, and CdSe crystal have excellent properties,becoming new semiconductor materials for room temperature nuclear radiation detectors. Detectors fabricated by those materials can be widely used in environmental monitoring, nuclear medicine, protection against surprise attack from nuclear weapons, customs safety inspection, industrial non-destructive inspection, aerospace, astronomy physics and high energy physics et al. Therefore,in recent years, studies of large bulk, high quality single crystals and detectors with regard to HgI_2, CdZnTe and CdSe have become the front project in high technological new materials field.

关 键 词：半导体新材料 室温核辐射探测器 制备技术 单晶体 HgI2 CDZNTE CDSE 

分 类 号：TN305[电子电信—物理电子学] TL81[核科学技术—核技术及应用]