等离子体技术净化CF_4及其生成物机理的探讨  

Study of Purifying Mechanism for CF_4 and Products by Plasma Technique

作　　者：于继荣[1] 黄光周[1] 杨英杰[1] 

机构地区：[1]华南理工大学电子与信息学院,广州510640

出　　处：《科学技术与工程》2004年第3期225-226,231,共3页Science Technology and Engineering

基　　金：国家自然科学基金 ( 60 0 710 3 2和 697710 15 )资助

摘　　要：讨论了利用等离子体技术净化CF4 及其生成物的方法 ,分析了净化机理。由四极质谱仪的分析结果发现 ,CF4 等生成物的谱峰强度随射频 (RF)功率的增加几乎线性地减小。RF功率达到 1.8kW时 ,已检测不到CF4 及其生产物对应的各个谱峰。在净化装置中放置CaO作为吸附剂 ,在室温下CaO对F有明显的净化作用。The method and mechanism are discussed for purifying CF 4 and products by plasma technique. From quadrupole gas analyzer, the intensity of spectral peaks for CF 4 and products reduces almost linearly with increase of RF power.The peaks cannot be measured when RF power is added to 1.8 kW. From scanning electron microscope, the purification for F is obvious by CaO at room temperature. The method to combine plasma technique with chemical adsorption which is used in purifying harmful gases has practical significance for environmental protection.

关 键 词：等离子体刻蚀 有害气体净化 环境保护 四氟化碳 环境污染 

分 类 号：TN405.982[电子电信—微电子学与固体电子学] X511[环境科学与工程—环境工程]