准分子激光脉冲直写刻蚀速率与能量密度的关系  

Relationship between average etching velocity and laser pulse energy density during excimer laser direct etching

作　　者：魏仁选[1] 姜德生[1] 周租德 

机构地区：[1]武汉理工大学光纤传感技术研究中心,湖北武汉430070 [2]武汉理工大学机电工程学院,湖北武汉430070

出　　处：《光学精密工程》2004年第2期231-234,共4页Optics and Precision Engineering

摘　　要：为了探索低成本、大深宽比加工方法,建立了实用的准分子激光微加工系统。以玻璃为实验靶材,用精密微动平台准确调节靶材位置,利用波长248nm的KrF准分子激光器,研究了准分子激光直写刻蚀过程中平均刻蚀速率与激光脉冲能量密度之间的关系。加工出的沟槽剖面形状均呈现锥型,单脉冲烧蚀速率随脉冲数的增加而减小,激光脉冲对材料的刻蚀具有能量阈值,加工槽的深度具有上限值。采用平行激光束或对加工过程进行动态控制还可实现矩形深槽或圆柱深孔的加工。In order to search for an economical high depth-width ratio micro-fabrication method and build up an excimer laser direct etching system, the relationship between average etching velocity and laser pulse energy density during excimer laser direct etching was investigated by using KrF excimer laser with a wavelength of 248 nm to ablate and etch glass material accurately located with a high-precision micro-motion controlling system. Experimental results showed that all the yielded grooves are V-grooves; the single laser pulse etching velocity decreases as the number of laser pulses increases; the depth of the yielded grooves becomes constant when the laser pulses add up to a definite number, there is an upper limit threshold for excimer laser pulse energy density in the etching process; and rectangular deep grooves or cylindrical deep holes can be produced by using parallel laser beams or dynamic control of etching process.

关 键 词：激光微细加工 准分子激光器 激光直写 能量密度 阈值 刻蚀速率 

分 类 号：TG665[金属学及工艺—金属切削加工及机床] TN24[电子电信—物理电子学]