CVD法在电致发光粉表面包覆SiO_2膜  

Silicon Dioxide Deposition on ACEL Phosphor Particles via CVD

作　　者：李志强[1] 李娟[1] 田少华[1] 韦志仁[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《表面技术》2004年第2期32-35,共4页Surface Technology

基　　金：河北省自然科学基金资助项目(502123)

摘　　要：　以硅酸乙酯和氧气作为前驱体,在500℃下,采用流态化CVD法,对ZnS:Cu电致发光粉表面包覆SiO2薄膜,对膜层进行了SEM、EDX、AgNO3抗腐蚀、发光亮度等测试。结果显示:发光粉颗粒表面明显存在一定量的SiO2。包覆的发光粉耐AgNO3腐蚀时间能达121h之久,样品的初始发光亮度均能达到未包覆样品的70%以上,包膜样品的发光光谱峰没有产生大的移动。SiO_2 was deposited on electroluminescent phosphor particles by tetraethoxysilane(TEOS) and O_2 as the precursors via fluidized-bed APCVD at 500℃. Films were characterized by SEM , EDX and the silver nitrate test, etc. Results showed that a certain amount of SiO_2 was observed on the surface of coated phosphor particles for the silver nitrate test. The samples color changed after 121 hours and the initial brightness of the coated samples can reach over 70% of the uncoated samples .No obvious changes in the luminescence spectrum were observed from the coating process.

关 键 词：电致发光粉 SIO2 包膜 CVD 

分 类 号：O482.31[理学—固体物理]